Read state retention circuit and method

ABSTRACT

A read state retention circuit and method are disclosed. The read state retention circuit comprises a charge storage unit, charging unit, sensing circuit and state indicator. The charging circuit is coupled to the charge storage unit for charging the charge storage unit. The sensing circuit is coupled to the charge storage unit for sensing a voltage level of the charge storage unit. The state indicator is coupled to the sensing circuit for outputting an indication signal in response to the voltage level.

This application claims the benefit of Taiwan application Serial No.95146943, filed Dec. 14, 2006, the subject matter of which isincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates in general to a retention circuit and method, andmore particularly to a read state retention circuit and method.

2. Description of the Related Art

A radio frequency identification (RFID) system transmits identificationdata by radio waves and accordingly the manager can manage goods in awireless way. The RFID system consists of a number of RFID tags andreaders. When the RFID system is applied in goods management, each ofthe goods has an RFID tag for storing the corresponding identificationdata, such as a name of goods, goods source, and purchase date. Tosearch or identify the goods in an identification range is a commonoperation of the RFID system.

When the reader reads the identification data stored in an RFID tag andidentifies that it is not the identification data required by the user,the reader sends out an instruction to set the RFID tag to be a “readstate”. When the RFID tag receives RF energy sent out by the readeragain within a duration, the RFID tag will respond to the reader that ithas been read or will not respond to the reader within a predeterminedduration. In this way, the number of RFID tags to be read can begradually reduced until the required identification data are searched orall the required goods are listed.

However, in the process when the reader continues reading the remainingRFID tags which are not read, if the “read state” of the RFID tags whichhave been read cannot be maintained, there occurs a serious situationthat some RFID tags will be read repeatedly, thus reducing searchefficiency. In a serious situation, owing that the search time is toolong, the “read state” of a large number of the RFID tags which havebeen read cannot be maintained and these RFID tags are read repeatedly,which causes the required identification data cannot be searched.

Therefore, to ensure the “read state” of the RFID tags which have beenread to be maintained during the search time of the reader is anessential subject.

SUMMARY OF THE INVENTION

The invention is directed to a read state retention circuit applied inRFID to increase search efficiency.

According to a first aspect of the present invention, a read stateretention circuit applied in RFID is provided. The read state retentioncircuit comprises a charge storage unit, charging unit, sensing circuitand state indicator. The charging circuit is coupled to the chargestorage unit for charging the charge storage unit. The sensing circuitis coupled to the charge storage unit for sensing a voltage level of thecharge storage unit. The state indicator is coupled to the sensingcircuit for outputting an indication signal in response to the voltagelevel.

According to a second aspect of the present invention, a read stateretention method is provided. The method comprises steps of asserting aread signal; raising a voltage level of the read signal; and charging acapacitor by an NMOS transistor in response to the raised voltage levelof the read signal.

The invention will become apparent from the following detaileddescription of the preferred but non-limiting embodiments. The followingdescription is made with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of an RFID system according to a preferredembodiment of the invention.

FIG. 2 is a circuit diagram of a read state retention circuit designedby intuition.

FIG. 3 is a block diagram of a read state retention circuit according toa preferred embodiment of the invention.

FIG. 4 is a detailed read state retention circuit according to thepreferred embodiment of the invention.

FIG. 5 is a detailed diagram of a voltage doubler applied to the readstate retention circuit in FIG. 4 according to the preferred embodimentof the invention.

FIG. 6 is a flowchart of a read state retention method according to thepreferred embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

The invention provides a read state retention circuit which can maintainthe “read state” of the RFID tags in the process when the readerperforms a searching or goods listing operation on the RFID tags.Therefore, the efficiency of identifying specific data or making a goodslist can be increased in the searching process of the reader.

Referring to FIG. 1, a schematic diagram of an RFID system 100 accordingto a preferred embodiment of the invention is shown. The RFID system 100includes an RFID tag 102 and a reader 104. The RFID tag 102 includes achip (or die) 106 and an antenna 108. The antenna 108 receives a radiofrequency signal RF sent out by the reader 104. The chip 106 includes acontrol circuit 110 and a non-volatile memory 112. The control circuit110 is electrically coupled to the antenna 108 for controlling RFID tagoperations, such as accessing the non-volatile memory 112 or setting astate of the RFID tag 102. The non-volatile memory 112, such as a flashmemory, stores identification data ID.

In the process of searching the RFID tag 102, the control circuit 110integrates a read state retention circuit therein, and the reader 104can command the RFID tag 102 to set the “read state”. FIG. 2 shows aread state retention circuit designed by intuition. The read stateretention circuit includes a p-type metal oxide semiconductor (PMOS)transistor 202 and a capacitor 204. By intuition, the PMOS transistor202 is used to charge the capacitor 204 to provide the read state of theRFID tag 102. However, the PMOS transistor 202 has a drawback ofelectric leakage and is not an ideal design in this case.

FIG. 3 is a block diagram of a read state retention circuit 300according to a preferred embodiment of the invention. The read stateretention circuit 300 includes a charge storage unit 301, a chargingcircuit 302, a sensing circuit 304 and a flip-flop 306. For example, thecharge storage unit 301 is a capacitor which can be implemented by asemiconductor device. The read state retention circuit 300 can beapplied in the control circuit 110 of FIG. 1 to charge the chargestorage unit 301 and output an indication signal IS tc a next-stagecircuit in the control circuit 110 when the identification data ID ofthe RFID tag 102 is read. The indication signal IS indicates whether theidentification data ID is read. Further, the read state retentioncircuit 300 is capable of correctly reading a voltage level of thecharge storage unit 301 and timely recharging the charge storage unit202 to ensure the “read state” is maintained when the RFID tag 102receives RF energy.

When the identification data ID has been read, according to a settingsignal SET_IDF, the charging circuit 302 charges the charge storage unit301 to a certain voltage level, such as +2.5V. The sensing circuit 304senses the voltage level of the charge storage unit 301 for setting astate, such as 1 or 0, of the flip-flop 306, and accordingly outputtingthe indication signal IS. For example, when the voltage level of thecharge storage unit 301 is higher than a predetermined voltage level VX,the sensing circuit 304 senses the voltage level of the charge storageunit 202 to set the state of the flip-flop 306 to be 1, so theindication signal IS outputted by the flip-flop 306 represents the “readstate”. The next stage circuit of the control circuit 110 can determinethat the identification data ID of the RFID tag 102 has been read by thereader 104 according to the indication signal IS. Moreover, it candetermine whether the charge storage unit 202 requires to be rechargedby the charging circuit 302 according to the indication signal IS.

When the reader 104 is to search specific identification data or listthe goods within the identification range, the efficiency of searchingand making a goods list can be improved by utilizing the above readstate retention circuit 300. For example, in an application of aplurality of RFID tags 102(1)˜102(N), N is a positive integer, when thereader 104 reads the identification data ID(1) stored in the first RFIDtag 102(1), and the identification data ID(1) is determined not to bethe desired data of the user or the identification data ID of goods isread, the reader 104 commands to set the “read state” of the first RFIDtag 102(1) and controls the charging circuit 302 to charge the chargestorage unit 301. Accordingly, the sensing circuit 304 sets theflip-flop 306 to be the state 1, which denotes the “read state”.Afterwards, in the process when the reader 104 reads other RFID tags102(2)˜102(N), and the first RFID tag 102(1) receives RF energy sent outby the reader 104, if the voltage level of the charge storage unit301(1) is higher than a predetermined voltage level VX, the sensingcircuit 304(1) sets the flip-flop 306 to be the state “1”. The chargingcircuit 302 recharges the charge storage unit 202 according to the stateof the flip-flop 306 to increase the voltage level of the charge storageunit 301 to the predetermined level, such as +2.5V, in order to maintainthe “read state” once again.

Referring to the read state retention circuit 300 of FIG. 3 again, byasserting the setting signal SET_IDF, the charging circuit 302 chargesthe charge storage unit 301. Preferably, the charging circuit 302includes a voltage doubler 312 and an n-type metal oxide semiconductor(NMOS) transistor 314. For example, the charge storage unit 301 is acapacitor which can be implemented by a semiconductor device. Utilizingthe NMOS transistor 314 to charge the charge storage unit 301 containsvery low electricity leakage, thus benefiting the RFID tag without anactive power source. However, the drain-source voltage drop of the NMOStransistor 314 and a gate voltage to control the NMOS transistor 314determines a final charged voltage of the charge storage unit 301. Ifthe charge storage unit 301 contains a low charged voltage, theinformation stored in the charge storage unit 301 will be easily lost astime passes. In this embodiment, the voltage doubler 312 doubles thevoltage level of the setting signal SET_IDF. The doubled voltage of thesetting signal SET_IDF is inputted to the gate of the NMOS transistor314 such that the NMOS transistor 314 can charge the charge storage unit301 to have the charged voltage as close to V_(DD) as possible. Afterthe charging operation, due to the no-electric-leakage feature of theNMOS transistor 314, the voltage of the charge storage unit 301 can bemaintained for a very long time, e.g. more than 2 seconds. As a result,after the RFID tag has been set to be the “read state”, the reader cancommand the RFID tag to enter a sleep state and when the RFID tag isawakened, it can correctly maintain the “read state” for a long periodwithout any possible errors. This is very beneficial in searchingoperations among many RFID tags.

FIG. 4 is a detailed diagram of a read state retention circuit 400according to the preferred embodiment of the invention. By asserting thesetting signal SET_IDF to set the read state, the voltage doubler 412doubles the voltage of the signal SET_IDF to increase a gate voltage ofthe NMOS 414 for charging the capacitor 401 in order to store a voltagefor the read state at a node X. When the RFID tag commands to read thepresent read state, the reading command is asserted via a reading signalREAD_IDF and accordingly the sensing circuit senses the voltage of thecapacitor 401 at the node X. In this embodiment, a PMOS transistor 420,NMOS transistor 422 and NOR gate 424 are applied to sense the voltage atthe node X. The signal READ_IDF triggers the flip-flop 406 to set thesensing result in the indication signal IS for the next-stage processingof the RFID tag. It should be noted that the node X is coupled to a gateof the NMOS transistor 422. Effective charging and no electric leakageof the NMOS transistor 414 maintains the voltage stored at the node Xfor a long time. As long as the level of the NOR gate 424 in the sensingcircuit is higher than the minimal operational voltage, the “read state”can be correctly maintained and outputted via the indication signal IS.Besides, a discharging circuit can be implemented at the node X fordischarging the voltage at the node X, whose detail is omitted here.

FIG. 5 is a detailed diagram of the voltage doubler 412 of the readstate retention circuit 400 in FIG. 4 according to the preferredembodiment of the invention. The voltage doubler 412 doubles the voltageof the signal SET_IDF via two inverters 502 and 504 and a capacitor 506in response to the signal SET_IDF. The doubled signal SET_IDF controlsthe charging operation of the NMOS 414 transistor in FIG. 4.

According to the read state retention circuit disclosed by the aboveembodiment of the invention, in the process when the reader readsseveral RFID tags, the RF signal is present intermittently. The readstate retention circuit effectively maintains the read state stored inthe charge storage unit to be above the predetermined voltage level VXwhen the RF signal is not present. When the RF signal is present, thecharge storage unit can be recharged as commanded. Therefore, thepresent invention effectively maintains the “read state” for a largenumber of RFID tags to avoid that the searching time is too long, thuspreventing from repeatedly reading or being incapable of searching therequired identification data.

FIG. 6 is a flowchart of a read state retention method according to thepreferred embodiment of the invention. First, in step 610, assert a readsignal. In step 620, raise a voltage level of the read signal, forexample, double the voltage level of the read signal by a voltagedoubler. In step 630, charge a capacitor by an NMOS transistor inresponse to the raised voltage of the read signal. In step 640, sense avoltage level stored in the capacitor. In step 650, generate anindication signal in response to the sensed voltage level to indicate aread state.

As mentioned above, the invention discloses a read state retentioncircuit applied in RFID. The read state retention circuit includes acharge storage unit, a charging circuit, a sensing circuit and a stateindicator. The charging circuit is coupled to the charge storage unitfor charging the charge storage unit. The sensing circuit is coupled tothe charge storage unit for sensing a voltage level of the chargestorage unit. The state indicator is coupled to the sensing circuit forgenerating an indication signal in response to the voltage level. Thecharge storage unit can be a capacitor and the state indicator can be aflip-flop. The read state retention circuit can receive a reading signalto trigger the sensing circuit and state indicator for sensing a voltagelevel of the charge storage unit and generating the indication signal.The sensing circuit includes a PMOS transistor, an NMOS transistor, anda NOR gate. The PMOS transistor comprises a drain coupled to a drain ofthe NMOS transistor and the NOR gate, and the NMOS transistor comprisesa gate coupled to the charge storage unit in order to sense the voltagelevel of the charge storage unit without leakage. Preferably, the readstate retention circuit and the RFID tag are integrated into a singlesemiconductor chip or die.

While the invention has been described by way of a preferred embodiment,it is to be understood that the invention is not limited thereto. On thecontrary, it is intended to cover various modifications and similararrangements and procedures, and the scope of the appended claimstherefore should accord with the broadest interpretation so as toencompass all such modifications, similar arrangements and procedures.

1. A read state retention circuit, applied in radio frequencyidentification (RFID), the read state retention circuit comprising: acharge storage unit; a charging circuit, coupled to the charge storageunit for charging the charge storage unit; a sensing circuit, coupled tothe charge storage unit for sensing a voltage level of the chargestorage unit; and a state indicator, coupled to the sensing circuit forgenerating an indication signal in response to the voltage level.
 2. Theread state retention circuit according to claim 1, wherein the stateindicator is a flip-flop.
 3. The read state retention circuit accordingto claim 1, wherein the charge storage unit is a capacitor.
 4. The readstate retention circuit according to claim 1, being applied to an RFIDtag, wherein the RFID tag responds to a reader whether the RFID tag hasbeen read according to the indication signal.
 5. The read stateretention circuit according to claim 1, a reading signal is asserted totrigger the sensing circuit and the state indicator to sense the voltagelevel of the charge storage unit and generate the indication signal inresponse to the voltage level.
 6. The read state retention circuitaccording to claim 1, wherein the sensing circuit comprises a p-typemetal oxide semiconductor (PMOS) transistor, an n-type metal oxidesemiconductor (NMOS) transistor and a NOR gate, the PMOS transistor hasa drain coupled to a drain of the NMOS transistor and the NOR gate, andthe NMOS transistor has a gate coupled to the charge storage unit inorder to sense the voltage level of the charge storage unit.
 7. The readstate retention circuit according to claim 1, wherein the read stateretention circuit is implemented in a single semiconductor chip.
 8. Theread state retention circuit according to claim 1, wherein the chargingcircuit comprises: a voltage doubler; and an NMOS transistor, coupled tothe voltage doubler; wherein the voltage doubler receives a settingsignal and doubles a voltage level of the setting signal to control theNMOS transistor to charge the charge storage unit.
 9. The read stateretention circuit according to claim 8, wherein the voltage doublercomprises a first inverter, a second inverter and a capacitorsuccessively connected in series.
 10. A read state retention method,comprising: asserting a read signal; raising a voltage level of the readsignal; and charging a capacitor by an NMOS transistor in response tothe raised voltage level of the read signal.
 11. The method according toclaim 10, wherein the raising step doubles the voltage level of the readsignal by a voltage doubler.
 12. The method according to claim 11,further comprising a step of sensing a voltage level stored in thecapacitor.
 13. The method according to claim 12, further comprising astep of generating an indication signal to indicate a read state inresponse to the sensed voltage level of the capacitor.